The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

Journal Article · Thu Jul 15 04:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S106378261007016X· OSTI ID:21562257

Tsatsulnikov, A F; Sakharov, A V; Lundin, W V; Zavarin, E E; Cherkashin, N A ^[1]; Hytch, M J ^[2]; Nikolaev, A E ^[1]; Mintairov, A M; Yan, He; Merz, J L ^[3]

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1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
2. National Center for Scientific Research (CNRS), Center for Material Elaboration and Structural Studies (CEMES) (France)
3. University of Notre Dame, EE Department (United States)

Optical and light-emitting diode structures with an active InGaN region containing short-period InGaN/GaN superlattices are studied. It is shown that short-period superlattices are thin two-dimensional layers with a relatively low In content that contain inclusions with a high In content 1-3 nm thick. Inclusions manifest themselves from the point of view of optical properties as a nonuniform array of quantum dots involved in a residual quantum well. The use of short-period superlattices in light-emitting diode structures allows one to decrease the concentration of nonradiative centers, as well as to increase the injection of carriers in the active region due to an increase in the effective height of the AlGaN barrier, which in general leads to an increase in the quantum efficiency of light-emitting diodes.

• OSTI ID: 21562257
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 44; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIERS
EFFICIENCY
GALLIUM COMPOUNDS
GALLIUM NITRIDES
INCLUSIONS
INJECTION
INTAKE
LAYERS
LIGHT EMITTING DIODES
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM DOTS
QUANTUM EFFICIENCY
QUANTUM WELLS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SUPERLATTICES
TWO-DIMENSIONAL CALCULATIONS