Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs

Journal Article · Mon Jun 15 00:00:00 EDT 2009 · Semiconductors

DOI:https://doi.org/10.1134/S1063782609060232· OSTI ID:21260339

Sakharov, A V; Zavarin, E E; Sinitsyn, M A; Nikolaev, A E; Usov, S O; Sizov, V S; Mikhailovsky, G A; Cherkashin, N A ^[1]; Hytch, M; Hue, F ^[2]; Yakovlev, E V; Lobanova, A V ^[3]; Tsatsulnikov, A F ^[1]

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1. Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation)
2. Center for Material Elaboration and Structural Studies (CEMES) of the National Center for Scientific Research (CNRS) (France)
3. STR Group-Soft-Impact Ltd. (Russian Federation)

Processes of active-region formation for green LEDs on the basis of multilayer strained InGaN/GaN nanoheterostructures have been studied. It is shown that the formation of structures of this kind is highly affected by elastic stress relaxation leading to a larger amount of indium incorporated into InGaN layers. For structures emitting in the blue spectral range, an increase in the number of quantum wells (QWs) from 1 to 10 does not lead to stress relaxation or to a shift of the emission wavelength, whereas for structures emitting in the green spectral range, raising the number of QWs from one to five causes a monotonic increase in the emission wavelength.

• OSTI ID: 21260339
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 43; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ALLOYS
EMISSION
GALLIUM ALLOYS
GALLIUM NITRIDES
INDIUM
INDIUM ALLOYS
LAYERS
NITROGEN ADDITIONS
QUANTUM WELLS
STRAINS
STRESS RELAXATION