Elemental distribution and oxygen deficiency of magnetron sputtered indium tin oxide films

Journal Article · Wed Jun 01 04:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3587174· OSTI ID:21538405

Thoegersen, Annett; Rein, Margrethe; Monakhov, Edouard; Mayandi, Jeyanthinath ^[1]; Diplas, Spyros ^[2]

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1. Institute for Energy Technology, Department of Solar Energy, Instituttveien 18, 2008 Kjeller (Norway)
2. SINTEF Materials and Chemistry, P.B 124 Blindern, N-0314 Oslo, Norway, and Centre for Material Science and Nanotechnology, University of Oslo (Norway)

The atomic structure and composition of noninterfacial ITO and ITO-Si interfaces were studied with transmission electron microscopy and x-ray photoelectron spectroscopy (XPS). The films were deposited by dc magnetron sputtering on monocrystalline p-type (100) Si wafers. Both as deposited and heat treated films consisted of crystalline ITO. The ITO/Si interface showed a more complicated composition. A thin layer of SiO{sub x} was found at the ITO/Si interface together with In and Sn nanoclusters, as well as highly oxygen deficient regions, as observed by XPS. High energy electron exposure of this area crystallized the In nanoclusters and at the same time increased the SiO{sub x} interface layer thickness.

• OSTI ID: 21538405
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 109; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHALCOGENIDES
CRYSTALLIZATION
DEPOSITION
DIMENSIONS
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
FILMS
HEAT TREATMENTS
INDIUM COMPOUNDS
INDIUM OXIDES
INSTABILITY
INTERFACES
LAYERS
MAGNETRONS
MATERIALS
MICROSCOPY
MICROWAVE EQUIPMENT
MICROWAVE TUBES
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHOTOELECTRON SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SPECTROSCOPY
SPUTTERING
THICKNESS
THIN FILMS
TIN COMPOUNDS
TIN OXIDES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY