Effect of cesium assistance on the electrical and structural properties of indium tin oxide films grown by magnetron sputtering

Journal Article · Wed Jul 15 00:00:00 EDT 2009 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3136854· OSTI ID:22053493

Song, Jaewon; Hwang, Cheol Seong; Park, Sung Jin; Yoon, Neung Ku ^[1]

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1. Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of)

Indium tin oxide (ITO) thin films were deposited by cesium (Cs)-assisted dc magnetron sputtering in an attempt to achieve a high performance at low temperatures. The films were deposited on SiO{sub 2}/Si wafer and glass (Eagle 2000) substrates at a substrate temperature of 100 degree sign C with a Cs vapor flow during the deposition process. The ITO thin films deposited in the presence of Cs vapor showed better crystallinity than the control films grown under normal Ar/O{sub 2} plasma conditions. The resistivity of the films with the Cs assistance was lower than that of the control films. The lowest resistivity of 6.2x10{sup -4} {Omega} cm, which is {approx}20% lower than that of the control sample, was obtained without any postdeposition thermal annealing. The surface roughness increased slightly when Cs vapor was added. The optical transmittance was >80% at wavelengths ranging from 380 to 700 nm.

• OSTI ID: 22053493
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 27, Issue 4; Other Information: (c) 2009 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CESIUM
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DEPOSITION
ELECTRIC CONDUCTIVITY
GLASS
INDIUM COMPOUNDS
LIGHT TRANSMISSION
PLASMA
ROUGHNESS
SILICON OXIDES
SPUTTERING
SUBSTRATES
SURFACES
THIN FILMS
TIN OXIDES
VAPORS