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Combined effects of bilayer structure and ion substitutions on bismuth ferrite thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3563573· OSTI ID:21538226
 [1];  [2]; ;  [1]
  1. Department of Materials Science, Sichuan University, Chengdu 610064 (China)
  2. Department of Materials Science and Engineering, National University of Singapore, Singapore 117574 (Singapore)

To understanding the combined effects of bilayer structure and ion substitutions on electrical behavior of BiFeO{sub 3} thin films, the Bi{sub 0.90}La{sub 0.10}Fe{sub 0.90}Zn{sub 0.10}O{sub 3}/Bi{sub 0.90}La{sub 0.10}Fe{sub 0.90}Sn{sub 0.10}O{sub 3} bilayers with different thickness ratios were fabricated on SrRuO{sub 3}/Pt/TiO{sub 2}/SiO{sub 2}/Si(100) substrates by radio frequency sputtering. Their dielectric constant increases and the fatigue endurance becomes better with increasing Bi{sub 0.90}La{sub 0.10}Fe{sub 0.90}Zn{sub 0.10}O{sub 3} thickness ratios. The bilayer with the thickness ratio of 210: 90 exhibits a high remanent polarization, and a better fatigue behavior is induced by higher driving electric fields and frequencies.

OSTI ID:
21538226
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 109; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English