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Fatigue and ferroelectric behavior of La and Zn comodified BiFeO{sub 3} thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3452348· OSTI ID:21476355
;  [1]
  1. Department of Materials Science and Engineering, Faculty of Engineering, National University of Singapore, Singapore 117574 (Singapore)

Bi{sub 0.90}La{sub 0.10}Fe{sub 0.95}Zn{sub 0.05}O{sub 3} (BLFZO) thin films were grown directly on Pt/TiO{sub 2}/SiO{sub 2}/Si(100) substrates without any buffer layer by off-axis radio frequency sputtering. The BLFZO thin film deposited at 580 deg. C possesses a single-phase purity, while those deposited at other temperatures exhibit a varying amount of second phases, indicating that the deposition temperature plays a critical role in the phase development of BLFZO thin films. Although La and Zn cosubstitutions lower the Curie temperature (T{sub c}) of BiFeO{sub 3} thin films, the resulting T{sub c} value ({approx}630 deg. C) is still much higher as compared to other lead-based or lead-free ferroelectric thin films. The BLFZO thin film exhibits a remanent polarization of 2P{sub r{approx}}131.7 {mu}C/cm{sup 2} and a coercive field of 2E{sub c{approx}}496 kV/cm, in association with the improvement in electrical resistance. On the basis of the studies for frequency (1 kHz{approx}1 MHz) and driving field (0.8E{sub c{approx}}2.0E{sub c}) dependences, the BLFZO thin film demonstrates the desired fatigue endurance and weak frequency and driving field dependence. La and Zn cosubstitutions are shown to contribute toward the high remanent polarization and fatigue endurance.

OSTI ID:
21476355
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 108; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English