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Synthesis and ferroelectric properties of epitaxial BiFeO{sub 3} thin films grown by sputtering

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.2213347· OSTI ID:20779406
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  1. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

We have grown epitaxial BiFeO{sub 3} thin films with smooth surfaces on (001) (101), and (111) SrTiO{sub 3} substrates using sputtering. Four-circle x-ray diffraction and cross-sectional transmission electron microscopy show that the BiFeO{sub 3} thin films have rhombohedral symmetry although small monoclinic distortions have not been ruled out. Stripe ferroelectric domains oriented perpendicular to the substrate miscut direction and free of impurity phase are observed in BiFeO{sub 3} on high miscut (4 deg.) (001) SrTiO{sub 3}, which attributes to a relatively high value of remanent polarization ({approx}71 {mu}C/cm{sup 2}). Films grown on low miscut (0.8 deg.) SrTiO{sub 3} have a small amount of impure phase {alpha}-Fe{sub 2}O{sub 3} which contributes to lower the polarization values ({approx}63 {mu}C/cm{sup 2}). The BiFeO{sub 3} films grown on (101) and (111) SrTiO{sub 3} exhibited remanent polarizations of 86 and 98 {mu}C/cm{sup 2}, respectively.

OSTI ID:
20779406
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 88; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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