Epitaxial integration of (0001) BiFeO{sub 3} with (0001) GaN
- Department of Materials Science and Engineering, Pennsylvania State University, Pennsylvania 16802-5005 (United States)
Epitaxial growth of (0001)-oriented BiFeO{sub 3} thin films on the (0001) surface of GaN has been realized using intervening epitaxial (111) SrTiO{sub 3}/(100) TiO{sub 2} buffer layers. The epitaxial BiFeO{sub 3} thin films have two in-plane orientations: [1120]BiFeO{sub 3}(parallel sign)[1120]GaN plus a twin variant related by a 180 deg. in-plane rotation. BiFeO{sub 3} shows an out-of-plane remanent polarization of {approx}90 {mu}C/cm{sup 2}, which is comparable to the remanent polarization of BiFeO{sub 3} prepared on (111) SrTiO{sub 3} single crystal substrates. The orientation of BiFeO{sub 3} realized on GaN provides the maximal out-of-plane polarization of BiFeO{sub 3}, which is equivalent to a surface charge of 5x10{sup 14} electrons/cm{sup 2}.
- OSTI ID:
- 20971881
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 90; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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