Molecular beam epitaxy of YMnO{sub 3} on c-plane GaN

Journal Article · Sun Mar 26 23:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2189832· OSTI ID:20779148

Chye, Y; Liu, T; Li, D; Lee, K; Lederman, D; Myers, T H ^[1]

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1. Multifunctional Materials Laboratory, Department of Physics, West Virginia University, Morgantown, West Virginia 26506-6315 (United States)

Epitaxial YMnO{sub 3} films were grown on (0001) GaN-on-sapphire templates using molecular beam epitaxy. The YMnO{sub 3} maintained the (0001) orientation with an in-plane YMnO{sub 3}/GaN epitaxial relationship of (0001) parallel (0001); [1100] parallel [1120]. The YMnO{sub 3} was ferroelectric at room temperature with a remanent polarization of {approx}3.2 {mu}C/cm{sup 2} and a saturation polarization of {approx}12 {mu}C/cm{sup 2}. This heterostructure is a promising candidate for multifunctional structures that integrate ferroelectrics with GaN-based high-power and short-wavelength light-emitting devices.

• OSTI ID: 20779148
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 88; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
FERROELECTRIC MATERIALS
GALLIUM NITRIDES
LAYERS
MANGANESE OXIDES
MOLECULAR BEAM EPITAXY
ORIENTATION
POLARIZATION
SAPPHIRE
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
WAVELENGTHS
YTTRIUM COMPOUNDS