Features of molecular beam epitaxy of the GaN (0001) and GaN (0001-bar) layers with the use of different methods of activation of nitrogen

Journal Article · Sat Aug 15 04:00:00 EDT 2009 · Semiconductors

DOI:https://doi.org/10.1134/S1063782609080181· OSTI ID:21260302

Jmerik, V N; Kaibyshev, V K; Komissarova, T A; Masalov, S A; Ivanov, S V ^[1]

---

1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

The results of comparative studies of the growth kinetics of the GaN layers of different polarity during ammonia molecular beam epitaxy and plasma-assisted molecular beam epitaxy (PA MBE) of nitrogen with the use of sapphire substrates and GaN(0001-bar)/c-Al{sub 2}O{sub 3} templates grown by gas-phase epitaxy from metalorganic compounds are presented. The possibility is shown of obtaining the GaN layers with an atomically smooth surface during molecular beam epitaxy with plasma activation of nitrogen. For this purpose, it is suggested to carry out the growth in conditions enriched with metal near the mode of formation of the Ga drops at a temperature close to the decomposition temperature of GaN (TS {approx} 760 deg. C). The conclusion is made that an increase in the growth temperature positively affects the structural, optical, and electrical properties of the GaN (0001-bar) layers. A high quality of the GaN (0001) films grown by the PA MBE method at a low temperature of {approx}700 deg. C on the GaN/c-Al{sub 2}O{sub 3} templates is shown.

• OSTI ID: 21260302
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 43; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
AMMONIA
CRYSTAL GROWTH
DECOMPOSITION
ELECTRICAL PROPERTIES
FILMS
GALLIUM NITRIDES
KINETICS
LAYERS
MOLECULAR BEAM EPITAXY
NITROGEN
PLASMA
SURFACES
TEMPERATURE RANGE 0400-1000 K