Plasma-assisted MBE of GaN and AlGaN on 6H SiC(0001)
- Westinghouse Science and Technology Center, Pittsburgh, PA (United States)
The growth of undoped and doped GaN and AlGaN films on off-axis 6H SiC substrates was investigated using plasma-assisted molecular beam epitaxy (MBE). Smooth and crack-free GaN and AlGaN films were obtained; the best results occurred at the highest growth temperature studied (800 C) and with a 40 to 50 nm AlN buffer layer grown at the same temperature. Carrier concentrations of up to n = 4 {times} 10{sup 20} cm{sup {minus}3} were accomplished with silicon, with a 40 to 50% activation rate as determined by secondary ion mass spectrometry (SIMS). Unintentionally doped Al{sub x}Ga{sub 1{minus}x}N (x {approx} 0.1) was n-type with a carrier concentration of 7 {times} 10{sup 18} cm{sup {minus}3}. N-type AlGaN (x {approx} 0.1)/p-type 6H SiC (0001) heterostructures showed excellent junction characteristics with leakage currents of less than 0.1 nA at 5 V reverse bias at room temperature and 0.5 nA at 200 C operating temperature.
- OSTI ID:
- 394945
- Report Number(s):
- CONF-951155--; ISBN 1-55899-298-7
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
ALUMINIUM NITRIDES
COMPOSITE MATERIALS
DOPED MATERIALS
ELECTRONIC EQUIPMENT
ENERGY BEAM DEPOSITION
EXPERIMENTAL DATA
GALLIUM NITRIDES
HALL EFFECT
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
NITROGEN
OPTICAL MICROSCOPY
PLASMA
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SURFACE CLEANING
X-RAY DIFFRACTION