Initial growth stage of AlGaN grown directly on (0001) 6H-SiC by MOVPE
Book
·
OSTI ID:580966
- Fujitsu Labs. Ltd., Atsugi (Japan)
The authors investigated the growth process of AlGaN films grown directly on 6H-SiC (0001) substrates by metalorganic vapor phase epitaxy (MOVPE). They focused on the initial growth stage to clarify the mechanism of nitride growth on SiC. From Energy Dispersive X-ray (EDX) analysis they found that an Al-rich region generated naturally at the AlGaN/SiC interface. They also found that Al flux determined the density of grain which generated during the initial growth stage, and this grain density reflected the surface morphology.
- OSTI ID:
- 580966
- Report Number(s):
- CONF-961202--; ISBN 1-55899-353-3
- Country of Publication:
- United States
- Language:
- English
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