Fabrication and properties of AlGaN/GaInN double heterostructure grown on 6H-SiC(0001){sub Si}

Book · Thu Oct 31 23:00:00 EST 1996

OSTI ID:395045

Amano, Hiroshi; Sota, Shigetoshi; Nishikawa, Masaki; Yoshida, Masato; Kawaguchi, Makoto; Ohta, Masahiro; Sakai, Hiromitsu; Akasaki, Isamu ^[1]

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1. Meijo Univ., Nagoya (Japan). Dept. of Electrical and Electronic Engineering

AlGaN/GaInN double heterostructures (DH) were fabricated by metalorganic vapor phase epitaxy on the (0001){sub Si} 6H-SiC substrate. A cleaved edge shows a very flat surface with roughness on the order of one monolayer. Stimulated emission and laser action from the UV to blue region was observed by optical pumping at room temperature (RT). The threshold power density was 27KW/cm{sup 2} which is smaller than that of the same structure grown on a sapphire (0001) substrate by a factor of four. A AlGaN/GaInN DH UV light emitting diode, using undoped GaInN is fabricated. The power efficiency and spectra width of this LED is comparable or superior to that of an LED having the same structure but grown on sapphire.

• OSTI ID: 395045
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM NITRIDES
AMMONIA
CHEMICAL VAPOR DEPOSITION
COMPOSITE MATERIALS
EFFICIENCY
ELECTRICAL PROPERTIES
ELECTRONIC EQUIPMENT
EXPERIMENTAL DATA
GALLIUM NITRIDES
INDIUM NITRIDES
LASER RADIATION
LIGHT EMITTING DIODES
NITROGEN
OPTICAL PROPERTIES
ORGANOMETALLIC COMPOUNDS
POWER DENSITY
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY