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Title: Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3526000· OSTI ID:21537988
 [1]; ;  [1]; ;  [2]
  1. Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas-UNICAMP, C. P. 6165, Campinas, Sao Paulo 13083-970 (Brazil)
  2. Institut de Ciencia dels Materials, Universitat de Valencia, E-46071 Valencia (Spain)

Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH{sub 4}) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

OSTI ID:
21537988
Journal Information:
Journal of Applied Physics, Vol. 108, Issue 12; Other Information: DOI: 10.1063/1.3526000; (c) 2010 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English