Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy

Journal Article · Wed Dec 01 00:00:00 EST 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3525610· OSTI ID:21537969

Hertenberger, S; Rudolph, D; Bichler, M; Finley, J J; Abstreiter, G; Koblmueller, G ^[1]

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1. Walter Schottky Institut and Physik Department, Technische Universitaet Muenchen, Garching, 85748 (Germany)

We investigated the interwire distance dependence on the growth kinetics of vertical, high-yield InAs nanowire arrays on Si(111) grown by catalyst-free selective area molecular beam epitaxy (MBE). Utilizing lithographically defined SiO{sub 2} nanomasks on Si(111) with regular hole patterns, catalyst-free and site-selective growth of vertically (111)-oriented InAs nanowires was achieved with very high yields of {approx}90 percent. Interestingly, the yield of vertically ordered nanowires was independent of the interwire distance and the initial growth stages. Significant size variation in the nanowires was found to depend critically on the interwire distance and growth time. Two growth regimes were identified--(i) a competitive growth regime with shorter and thinner nanowires for narrow interwire distances and (ii) a diffusion-limited growth regime for wider distances, providing good estimates for the surface diffusion lengths. Surprisingly, despite these size-dependent effects the nanowire geometries remained unaltered with uniform, almost nontapered morphologies even over large variation in nanowire density ({approx}mid-10{sup 6}-10{sup 9} cm{sup -2} range). X-ray diffraction further confirmed the vertical (111) directionality with low crystal tilt by rocking curve widths ({omega} scans) as low as {approx}0.6 deg. These findings demonstrate the capability to precisely tailor the position and size of well-oriented III-V semiconductor nanowires through noncatalytic MBE selective area growth and provide an important step toward fully integrated, uniform vertical III-V nanowire array-on-Si devices.

• OSTI ID: 21537969
• Journal Information: Journal of Applied Physics, Vol. 108, Issue 11; Other Information: DOI: 10.1063/1.3525610; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CATALYSTS
CRYSTALS
DENSITY
DIFFUSION
DIFFUSION LENGTH
EXPLORATION
FABRICATION
INDIUM ARSENIDES
KINETICS
MOLECULAR BEAM EPITAXY
NEUTRON DIFFRACTION
QUANTUM WIRES
REGULATIONS
RESOLUTION
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SURFACES
X-RAY DIFFRACTION
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DIFFRACTION
DIMENSIONS
EPITAXY
INDIUM COMPOUNDS
LAWS
LENGTH
MATERIALS
NANOSTRUCTURES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SCATTERING
SILICON COMPOUNDS