High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO{sub 2}/Si (111)

Journal Article · Mon Jul 23 04:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4738769· OSTI ID:22089318

Hertenberger, S.; Vizbaras, K.; Rudolph, D.; Becker, J.; Bolte, S.; Bichler, M.; Finley, J. J.; Amann, M. -C.; Koblmueller, G. ^[1]; Funk, S.; Zardo, I.; Abstreiter, G. ^[1]; Yadav, A.; Scarpa, G.; Lugli, P. ^[2]; Doeblinger, M. ^[3]

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1. Walter Schottky Institut and Physik Department, Technische Universitaet Muenchen, Garching 85748 (Germany)
2. Institute for Nanoelectronics, Technische Universitaet Muenchen, Munich 80333 (Germany)
3. Department of Chemistry, Ludwig-Maximilian Universitaet Muenchen, Munich 81377 (Germany)

We report improved homogeneity control of composition-tuned In{sub 1-x}Ga{sub x}As (x < 0.4) nanowire (NW) arrays grown by catalyst-free molecular beam epitaxy (MBE) on nanoimprinted SiO{sub 2}/Si (111) substrates. Using very high As/(Ga+In) ratios at growth temperatures of 550 Degree-Sign C enabled uniform incorporation of the respective group-III elements (In,Ga) over the investigated composition range, confirmed by high-resolution x-ray diffraction (HRXRD) and energy dispersive x-ray spectroscopy. Low-temperature (20 K) photoluminescence of these In-rich In{sub 1-x}Ga{sub x}As NW ensembles reveal state-of-the-art linewidths of {approx}29-33 meV. These are independent of Ga content, suggesting an overall low degree of phase separation. In contrast, self-assembled, non-periodic In{sub 1-x}Ga{sub x}As NW arrays show larger inhomogeneity with increased peakwidths in 2{theta}-{omega} HRXRD scans as well as broadened Raman modes. These results demonstrate the excellent potential of site-selective MBE growth of high-periodicity non-tapered In{sub 1-x}Ga{sub x}As NW arrays with low size and composition dispersion for optimized device integration on Si.

• OSTI ID: 22089318
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 101; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ARSENIC COMPOUNDS
CHEMICAL ANALYSIS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
PERIODICITY
PHOTOLUMINESCENCE
QUANTUM WIRES
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SUBSTRATES
X RADIATION
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY