Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si

Journal Article · Mon Mar 21 04:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3567496· OSTI ID:21518347

Hertenberger, S; Rudolph, D; Bichler, M; Spirkoska, D; Finley, J J; Koblmueller, G ^[1]; Bolte, S ^[1]; Doeblinger, M ^[2]; Abstreiter, G ^[1]

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1. Walter Schottky Institut and Physik Department, Technische Universitaet Muenchen, Garching 85748 (Germany)
2. Department of Chemistry, Ludwig-Maximilians-Universitaet Muenchen, Munich 81377 (Germany)

The growth mechanism of self-induced InAs nanowires (NWs) grown on Si (111) by molecular beam epitaxy was investigated by in situ reflection high energy electron diffraction and ex situ scanning and transmission electron microscopy. Abrupt morphology transition and in-plane strain relaxation revealed that InAs NWs nucleate without any significant delay and under the absence of indium (In) droplets. These findings are independent of the As/In-flux ratio, revealing entirely linear vertical growth rate and nontapered NWs. No evidence of In droplets nor associated change in the NW apex morphology was observed for various growth termination procedures. These results highlight the absence of vapor-liquid-solid growth, providing substantial benefits for realization of atomically abrupt doping and composition profiles in future axial InAs-based NW heterostructures on Si.

• OSTI ID: 21518347
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 98; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
DIFFRACTION
DROPLETS
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
INDIUM ARSENIDES
INDIUM COMPOUNDS
MATERIALS
MICROSCOPY
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PARTICLES
PNICTIDES
QUANTUM WIRES
REFLECTION
RELAXATION
SCANNING ELECTRON MICROSCOPY
SCATTERING
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SOLIDS
STRAINS
TRANSMISSION ELECTRON MICROSCOPY