Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

Journal Article · Mon Nov 15 04:00:00 EST 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3509149· OSTI ID:21537930

Ibanez, J; Oliva, R ^[1]; De la Mare, M; Zhuang, Q; Godenir, A; Krier, A ^[2]; Schmidbauer, M ^[3]; Hernandez, S; Pellegrino, P ^[4]; Scurr, D J ^[5]; Cusco, R; Artus, L; Shafi, M; Mari, R H; Henini, M ^[6]

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1. Institut Jaume Almera, Consell Superior d'Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n, 08028 Barcelona, Catalonia (Spain)
2. Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)
3. Leibniz Institute for Crystal Growth, Max-Born-Str. 2, D-12489 Berlin (Germany)
4. Department of Electronics, MIND-IN2UB, University of Barcelona, Marti i Franques 1, 08028 Barcelona, Catalonia (Spain)
5. School of Pharmacy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
6. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

We perform a structural and optical characterization of InAs{sub 1-x}N{sub x} epilayers grown by molecular beam epitaxy on InAs substrates (x < or approx. 2.2%). High-resolution x-ray diffraction (HRXRD) is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy (ToF-SIMS) measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard's law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing (BAC) model. We find that the room-temperature coupling parameter for InAsN within the BAC model is C{sub NM}=2.0{+-}0.1 eV.

• OSTI ID: 21537930
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 108; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOY SYSTEMS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL ANALYSIS
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DIFFRACTION
EMISSION
EPITAXY
FILMS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFRARED SPECTRA
ION MICROPROBE ANALYSIS
LATTICE PARAMETERS
LUMINESCENCE
MASS SPECTRA
MASS SPECTROSCOPY
MICROANALYSIS
MOLECULAR BEAM EPITAXY
NITROGEN COMPOUNDS
NONDESTRUCTIVE ANALYSIS
PHOTOLUMINESCENCE
PHOTON EMISSION
PNICTIDES
RAMAN EFFECT
RAMAN SPECTRA
SCATTERING
SPECTRA
SPECTROSCOPY
SUBSTRATES
TERNARY ALLOY SYSTEMS
VEGARD LAW
X-RAY DIFFRACTION