Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth

Journal Article · Mon Dec 28 04:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3280861· OSTI ID:21347360

Rui, Chen; Phann, S; Sun, H D ^[1]; Zhuang, Q; Godenir, A M. R.; Krier, A ^[2]

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1. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371 (Singapore)
2. Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

We report on the comparative studies of photoluminescence (PL) properties of molecular beam epitaxy grown dilute InAsN epilayers with and without antimony (Sb) flux during the growth. Both samples exhibit strong midinfrared (MIR) emission at room temperature, while the sample with Sb flux has much higher intensity. At low temperatures, these samples exhibit totally different PL features in terms of line width, peak position, intensity, and their dependences on temperature and excitation density. Our results clearly indicate that part of Sb atoms serve as a surfactant that effectively improves the optical quality of MIR dilute nitrides.

• OSTI ID: 21347360
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 95; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY
ARSENIC COMPOUNDS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
ELEMENTS
EMISSION
ENERGY GAP
EPITAXY
EXCITONS
INDIUM COMPOUNDS
LAYERS
LINE WIDTHS
LUMINESCENCE
MATERIALS
METALS
MOLECULAR BEAM EPITAXY
NITRIDES
NITROGEN COMPOUNDS
PHOTOLUMINESCENCE
PHOTON EMISSION
PNICTIDES
QUASI PARTICLES
SEMICONDUCTOR MATERIALS
SURFACTANTS
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K