Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range
- Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)
- School of Physics and Astronomy, Nottingham University, Nottingham NG7 2RD (United Kingdom)
- Department of Electronic Science, University of Calcutta, 92 A. P. C. Road, Kolkata 700009 (India)
We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range of 0%-1% and photoluminescence emission in the midinfrared spectral range. The photoluminescence emission of the sample containing 1% N reveals localized energy levels resonant with the conduction band states of InAsN.
- OSTI ID:
- 21294190
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 95; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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