Molecular beam epitaxy growth of the dilute nitride GaAs{sub 1-x}N{sub x} with a helical resonator plasma source

Journal Article · Sun Jul 15 04:00:00 EDT 2007 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.2748800· OSTI ID:20979502

Zangenberg, N; Beaton, D A; Tiedje, T; Tixier, S; Adamcyk, M; Kumaran, R; MacKenzie, J A; Nodwell, E; Young, E C; Sproule, G I ^[1]

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1. Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia V6T 1Z4 (Canada)

Dilute nitride semiconductors of composition GaAs{sub 1-x}N{sub x} (0.0017<x<0.0115) are grown by plasma-assisted molecular beam epitaxy with a helical resonator plasma source for active nitrogen. The plasma source is self-starting at the operating pressure and can be operated at two different frequencies for which the emission spectrum is dominated by N{sub 2} molecules or by N atoms. For the same power the molecular-rich mode is found to produce a higher flux of active nitrogen. After extended operation the plasma tube becomes contaminated with As which reduces the flux of active nitrogen and creates a below band gap emission band in the photoluminescence of the GaAs{sub 1-x}N{sub x}. For the clean discharge tube no difference is observed in the photoluminescence for samples grown in the molecule-rich or atom-rich mode.

• OSTI ID: 20979502
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 4 Vol. 25; ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMS
EMISSION SPECTRA
GALLIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
MOLECULES
NITROGEN
PHOTOLUMINESCENCE
PLASMA
RESONATORS
SEMICONDUCTOR MATERIALS
TUBES