Valence-band splitting and shear deformation potential of dilute GaAs{sub 1-x}N{sub x} alloys
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
- Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)
The valence-band splitting in thin GaAs{sub 1-x}N{sub x} (0.011{<=}x{<=}0.033) epilayers strained coherently by the GaAs substrate is observed in electroreflectance. This study reveals that the valence-band deformation potential does not follow the linear interpolation of those for GaAs and GaN, but shows a rather strong composition dependence with a surprising bowing in a small composition region of the alloy. These results contradict the currently held view that the conduction band is greatly altered but that the valence band is only weakly perturbed by dilute nitrogen doping of GaAs. (c) 2000 The American Physical Society.
- OSTI ID:
- 20215497
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 7 Vol. 61; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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