Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in GaAs{sub 1{minus}x}N{sub x } with x {lt} 0.03

Journal Article · Thu Apr 01 04:00:00 EST 1999 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.82.3312· OSTI ID:337558

Perkins, J D; Mascarenhas, A; Zhang, Y; Geisz, J F; Friedman, D J; Olson, J M; Kurtz, S R ^[1]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401-3393 (United States)

We report electroreflectance spectra for a series of GaAs{sub 1{minus}x} N{sub x} samples with x{lt}0.03 . For all samples, the fundamental band gap transition (E{sub 0}) and the transition from the spin-orbit split-off valence band (E{sub 0}+{Delta}{sub 0}) are observed. For samples with x{ge}0.008 , an additional transition (E{sub +}) is observed. With increasing nitrogen content, the increase in E{sub +} is linear in, and nearly equal to, the band gap reduction indicative of a nitrogen-induced level repulsion. The directly observed E{sub +} transition may arise from either a nitrogen-related resonant level or a disorder-activated indirect transition. {copyright} {ital 1999} {ital The American Physical Society}

• Research Organization: National Renewable Energy Laboratory
• DOE Contract Number: AC36-83CH10093
• OSTI ID: 337558
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 16 Vol. 82; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL COMPOSITION
ELECTRO-OPTICAL EFFECTS
ELECTRONIC STRUCTURE
ENERGY GAP
ENERGY-LEVEL TRANSITIONS
GALLIUM ARSENIDES
GALLIUM NITRIDES
NITROGEN COMPOUNDS