skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Quasiparticle excitations in GaAs[sub 1[minus][ital x]]N[sub [ital x]] and AlAs[sub 1[minus][ital x]]N[sub [ital x]] ordered alloys

Journal Article · · Physical Review, B: Condensed Matter; (United States)
;  [1]
  1. Department of Physics, University of California at Berkeley, and Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

We have performed a quasiparticle study of the fundamental excitations in ordered alloys of III-V semiconductors, GaAs[sub 1[minus][ital x]]N[sub [ital x]] and AlAs[sub 1[minus][ital x]]N[sub [ital x]]. The experimentally observed anomalous redshift in GaAs[sub 1[minus][ital x]]N[sub [ital x]] of the direct band edge is explained here by effects arising from the 20% lattice mismatch. The fact that the bottom of the conduction band is mainly dominated by nitrogen leads to a large reduction of the fundamental gap at [Gamma] as the volume increases. This reduction continues until the charge density begins to locate on the arsenic site. Based on this simple scenario, we predict that a similar redshift may be observed in the indirect gap AlAs[sub 1[minus][ital x]]N[sub [ital x]] alloys. Also an indirect to direct band-gap transition will be observed for intermediate N concentrations. The possibility of closing the band gap is discussed in terms of the quasiparticle results.

DOE Contract Number:
AC03-76SF00098
OSTI ID:
6869771
Journal Information:
Physical Review, B: Condensed Matter; (United States), Vol. 51:7; ISSN 0163-1829
Country of Publication:
United States
Language:
English