Quasiparticle excitations in GaAs[sub 1[minus][ital x]]N[sub [ital x]] and AlAs[sub 1[minus][ital x]]N[sub [ital x]] ordered alloys
- Department of Physics, University of California at Berkeley, and Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
We have performed a quasiparticle study of the fundamental excitations in ordered alloys of III-V semiconductors, GaAs[sub 1[minus][ital x]]N[sub [ital x]] and AlAs[sub 1[minus][ital x]]N[sub [ital x]]. The experimentally observed anomalous redshift in GaAs[sub 1[minus][ital x]]N[sub [ital x]] of the direct band edge is explained here by effects arising from the 20% lattice mismatch. The fact that the bottom of the conduction band is mainly dominated by nitrogen leads to a large reduction of the fundamental gap at [Gamma] as the volume increases. This reduction continues until the charge density begins to locate on the arsenic site. Based on this simple scenario, we predict that a similar redshift may be observed in the indirect gap AlAs[sub 1[minus][ital x]]N[sub [ital x]] alloys. Also an indirect to direct band-gap transition will be observed for intermediate N concentrations. The possibility of closing the band gap is discussed in terms of the quasiparticle results.
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 6869771
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Vol. 51:7; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
BAND THEORY
PHOTOLUMINESCENCE
GALLIUM ARSENIDES
COLLECTIVE EXCITATIONS
NITROGEN ADDITIONS
QUASI PARTICLES
SUBSTOICHIOMETRY
ALLOYS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ENERGY-LEVEL TRANSITIONS
EXCITATION
GALLIUM COMPOUNDS
LUMINESCENCE
PNICTIDES
360606* - Other Materials- Physical Properties- (1992-)
665000 - Physics of Condensed Matter- (1992-)