Conduction-Band-Resonant Nitrogen-Induced Levels in GaAs1-xNx with x&lt;0.03

Perkins, John D.; Mascarenhas, Angelo; Geisz, John F.; Friedman, Daniel J.

doi:10.1103/PhysRevB.64.121301

Conduction-Band-Resonant Nitrogen-Induced Levels in GaAs1-xNx with x<0.03

Journal Article · Sat Sep 15 04:00:00 EDT 2001 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.64.121301· OSTI ID:40277602

Perkins, John D.; Mascarenhas, Angelo; Geisz, John F.; Friedman, Daniel J.

We report electroreflectance spectra between 1 and 4 eV for GaAs{sub 1-x}N{sub x} samples with x<3%. In addition to four intrinsic GaAs transitions, three nitrogen-induced optical transitions, E{sub +}, E{sub +}+{Delta}{sub 0}, and E{sup *}, were observed. The weak and heretofore unknown E{sup *} transition was observed in four samples with 0.1 to 2.4 % nitrogen and occurs 0.1 to 0.3 eV below the {approx}3 eV intrinsic E{sub 1} transition. Opposite to E{sub +},E{sup *} decreases in energy with increasing nitrogen content. Furthermore, in the dilute limit, both E{sub +} and E{sup *} appear to converge to the known conduction-band-resonant nitrogen-impurity level N{sub x}.

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 40277602

Report Number(s):: NREL/JA-520-31812

Journal Information:: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 12 Vol. 64; ISSN 0163-1829

Publisher:: The American Physical Society

Country of Publication:: United States

Language:: English

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