Valence band anticrossing in GaBixAs1-x

Journal Article · Wed Jul 11 04:00:00 UTC 2007 · Applied Physics Letters

OSTI ID:950977

Alberi, K; Dubon, O D; Walukiewicz, W; Yu, K M; Bertulis, K; Krotkus, A

The optical properties of GaBixAs1-x (0.04< x< 0.08) grown by molecular beam epitaxy have been studied by photomodulated reflectance spectroscopy. The alloys exhibit a strong reduction in the bandgap as well as an increase in the spin-orbit splitting energy with increasing Bi concentration. These observations are explained by a valence band anticrossing model, which shows that a restructuring of the valence band occurs as the result of an anticrossing interaction between the extended states of the GaAs valence band and the resonant T2 states of the Bi atoms.

• Research Organization: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
• Sponsoring Organization: Materials Sciences Division
• DOE Contract Number: AC02-05CH11231
• OSTI ID: 950977
• Report Number(s): LBNL-1669E
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 91; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
ATOMS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
SPECTROSCOPY
VALENCE