Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates
- School of Physics and Astronomy, University of Nottingham, NG7 2RD Nottingham (United Kingdom)
We report the growth by molecular beam epitaxy of GaBi{sub x}As{sub 1-x} epilayers on (311)B GaAs substrates. We use high-resolution x-ray diffraction (HRXRD), transmission electron microscopy, and Z-contrast imaging to characterize the structural properties of the as-grown material. We find that the incorporation of Bi into the GaBiAs alloy, as determined by HRXRD, is sizably larger in the (311)B epilayers than in (001) epilayers, giving rise to reduced band-gap energies as obtained by optical transmission spectroscopy.
- OSTI ID:
- 21016222
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 91; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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