High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate

Journal Article · Mon May 16 04:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3592569· OSTI ID:21518437

Liu, S Q; Han, Q; Zhu, B; Yang, X H; Wang, X; Wang, J; Wang, X P ^[1]; Ni, H Q; He, J F; Li, M F; Zhu, Y; Niu, Z C ^[2]

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1. State Key laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
2. State Key laboratory for Superlattices and microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

In this letter, we demonstrated a top illuminated 1.55 {mu}m metamorphic InGaAs resonant-cavity-enhanced p-i-n photodetector grown on GaAs substrate. The photodetectors were grown by a solid-source molecular beam epitaxy system. The high quality linearly graded In{sub x}Al{sub 0.4}Ga{sub 1-x-0.4}As metamorphic buffer layer enabled photodiodes to achieve ultralow dark current densities of 2.3x10{sup -6} A/cm{sup 2} at 0 V and 4.2x10{sup -5} A/cm{sup 2} at a reverse bias of 5 V. A high quantum efficiency of 84.4% at resonant wavelength of 1542 nm, a full width at half maximum about 14 nm, and a -3 dB bandwidth up to 13 GHz were also obtained.

• OSTI ID: 21518437
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 98; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOY SYSTEMS
ARSENIC COMPOUNDS
ARSENIDES
BUFFERS
CAVITIES
CAVITY RESONATORS
CRYSTAL GROWTH METHODS
CURRENT DENSITY
EFFICIENCY
ELECTRONIC EQUIPMENT
EPITAXY
EQUIPMENT
FREQUENCY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GHZ RANGE
INDIUM COMPOUNDS
LAYERS
MATERIALS
MOLECULAR BEAM EPITAXY
PHOTODETECTORS
PHOTODIODES
PNICTIDES
QUANTUM EFFICIENCY
RESONATORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SOLIDS
SUBSTRATES
TERNARY ALLOY SYSTEMS
WAVELENGTHS