1.55 {mu}m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs

Journal Article · Mon Sep 12 04:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2048828· OSTI ID:20709747

Han, Q; Yang, X H; Niu, Z C; Ni, H Q; Xu, Y Q; Zhang, S Y; Du, Y; Peng, L H; Zhao, H; Tong, C Z; Wu, R H; Wang, Q M ^[1]

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1. Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

We report the design, growth, fabrication, and characterization of a GaAs-based resonant-cavity-enhanced (RCE) GaInNAs photodetector operating at 1.55 {mu}m. The structure of the device was designed using a transfer-matrix method (TMM). By optimizing the molecular-beam epitaxy growth conditions, six GaInNAs quantum wells were used as the absorption layers. Twenty-five (25)- and 9-pair GaAs/AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. At 1.55 {mu}m, a quantum efficiency of 33% with a full width at half maximum of 10 nm was obtained. The dark current density was 3x10{sup -7} A/cm{sup 2} at a bias of 0 V and 4.3x10{sup -5} A/cm{sup 2} at a reverse bias of 5 V. The primary time response measurement shows that the device has a rise time of less than 800 ps.

• OSTI ID: 20709747
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 87; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ALUMINIUM ARSENIDES
CAVITY RESONATORS
CURRENT DENSITY
FABRICATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTODETECTORS
PULSE RISE TIME
QUANTUM EFFICIENCY
QUANTUM WELLS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
TRANSFER FUNCTIONS
TRANSFER MATRIX METHOD