Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates

Journal Article · Sat Dec 15 04:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618120205· OSTI ID:22749707

Nekorkin, S. M.; Zvonkov, B. N. ^[1]; Aleshkin, V. Ya.; Dubinov, A. A. ^[2]; Pashenkin, I. J.; Dikareva, N. V.; Chigineva, A. B. ^[1]

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1. Physical Technical Research Institute, Lobachevsky State University of Nizhny Novgorod (Russian Federation)
2. Institute for Physics of Microstructures, Russian Academy of Sciences (Russian Federation)

The results of studying the reverse dark currents of photodiodes for a wavelength of 1.06 μm grown on a GaAs substrate with the help of an InGaP metamorphic buffer layer are presented. The metalorganic chemical vapor epitaxy (MOCVD) growth technology of InGaP metamorphic buffer layers with a stepwise composition variation is developed. Photodiodes with a photosensitive area of 1 mm in diameter and radiation input through the substrate are fabricated. The photodiode dark current at room temperature and reverse bias of –3 V was 50 nA. It is assumed that the bulk component of the dark current is caused by the tunneling mechanism through the trap levels.

• OSTI ID: 22749707
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 12 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BUFFERS
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DARK CURRENT
GALLIUM ARSENIDES
INDIUM ARSENIDES
PHOTODIODES
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
TUNNEL EFFECT