Tilt generation in step-graded In{sub x}Ga{sub 1-x}As metamorphic pseudosubstrate on a singular GaAs substrate using a low-temperature grown InGaP interlayer

Journal Article · Thu May 15 04:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2927498· OSTI ID:21137267

Ghanad Tavakoli, Shahram; Hulko, Oksana; Thompson, David A ^[1]

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1. Department of Engineering Physics, 1280 Main Street West, Hamilton, Ontario L8S 4 L7 (Canada)

Metamorphic pseudosubstrates of In{sub 0.42}Ga{sub 0.58}As were grown by molecular beam epitaxy using step-graded In{sub x}Ga{sub 1-x}As buffer layers grown either directly on a (001) GaAs substrate or on a GaAs substrate overgrown with a layer of low-temperature grown In{sub 0.51}Ga{sub 0.49}P (LT-InGaP). The structures were examined using x-ray reciprocal space mapping to determine the characteristics of the pseudosubstrates and buffer layers. For the sample grown on the LT-InGaP layer, the pseudosubstrate exhibited an asymmetric tilt around [110] toward the [110] direction. Weak-beam dark-field electron imaging shows an imbalance of misfit dislocations with opposite sign Burgers vector. An explanation for this tilt is given and it is suggested that it may be responsible for the improved quality of epitaxial layers grown on such pseudosubstrates.

• OSTI ID: 21137267
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 103; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ASYMMETRY
BUFFERS
BURGERS VECTOR
CRYSTAL GROWTH
DISLOCATIONS
ELECTRONS
GALLIUM ARSENIDES
INDIUM COMPOUNDS
LAYERS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
SUBSTRATES