Growth and characterization of GaAsSb metamorphic samples on an InP substrate

Journal Article · Mon May 15 04:00:00 EDT 2006 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.2194024· OSTI ID:20777187

Mohammedy, F M; Hulko, O; Robinson, B J; Thompson, D A; Deen, M J; Simmons, J G ^[1]

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1. Department of Electrical and Computer Engineering, McMaster University, Hamilton, Ontario L8S 4K1 (Canada)

Buffer layers of GaAs{sub 1-x}Sb{sub x} were grown on an InP substrate starting at x=0.49 (lattice matched to InP) and increasing x in steps of 0.03-1.0 (GaSb), followed by a 0.5 {mu}m thick GaSb metamorphic layer. A 10 nm thick InAs quantum well was grown on top and capped with a 100 nm GaSb. All layers were grown using gas source molecular beam epitaxy by reducing the As flux in small steps while keeping the Sb flux fixed. The substrate temperature during growth was {approx}490 deg.C. High-Resolution x-ray diffraction analysis showed that the metamorphic layer was almost fully relaxed. Cross-sectional transmission electron microscopy images show that a postgrowth anneal at 600 deg.C for 30 s successfully reduces the number of dislocations threading through the metamorphic layer. Hence the top layer can be used satisfactorily as a pseudosubstrate for subsequent layer growths assuming a GaSb lattice constant.

• OSTI ID: 20777187
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 3 Vol. 24; ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
DISLOCATIONS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LATTICE PARAMETERS
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION