Development of “GaSb-on-silicon” metamorphic substrates for optoelectronic device growth

Ince, Fatih F.; Frost, Mega; Shima, Darryl; Rotter, Thomas J.; Addamane, Sadhvikas Jayachandra; Canedy, Chadwick L.; Tomasulo, Stephanie; Kim, Chul Soo; Bewley, William W.; Vurgaftman, Igor; Meyer, Jerry R.; Balakrishnan, Ganesh

doi:10.1116/6.0003211

Development of “GaSb-on-silicon” metamorphic substrates for optoelectronic device growth

Journal Article · Wed Jan 24 00:00:00 EST 2024 · Journal of Vacuum Science and Technology B

DOI:https://doi.org/10.1116/6.0003211· OSTI ID:2320342

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University of New Mexico, Albuquerque, NM (United States)
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
Naval Research Laboratory (NRL), Washington, DC (United States)

The epitaxial development and characterization of metamorphic “GaSb-on-silicon” buffers as substrates for antimonide devices is presented. The approach involves the growth of a spontaneously and fully relaxed GaSb metamorphic buffer in a primary epitaxial reactor, and use of the resulting “GaSb-on-silicon” wafer to grow subsequent layers in a secondary epitaxial reactor. The buffer growth involves four steps—silicon substrate preparation for oxide removal, nucleation of AlSb on silicon, growth of the GaSb buffer, and finally capping of the buffer to prevent oxidation. This approach on miscut silicon substrates leads to a buffer with negligible antiphase domain density. The growth of this buffer is based on inducing interfacial misfit dislocations between an AlSb nucleation layer and the underlying silicon substrate, which results in a fully relaxed GaSb buffer. A 1 μm thick GaSb layer buffer grown on silicon has ~9.2 × 10⁷ dislocations/cm². The complete lack of strain in the epitaxial structure allows subsequent growths to be accurately lattice matched, thus making the approach ideal for use as a substrate. Here we characterize the GaSb-on-silicon wafer using high-resolution x-ray diffraction and transmission electron microscopy. The concept’s feasibility is demonstrated by growing interband cascade light emitting devices on the GaSb-on-silicon wafer. The performance of the resulting LEDs on silicon approaches that of counterparts grown lattice matched on GaSb.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: Air Force Research Laboratory; Army Research Office (ARO); National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)

Grant/Contract Number:: NA0003525

OSTI ID:: 2320342

Report Number(s):: SAND--2024-02573J

Journal Information:: Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B Journal Issue: 1 Vol. 42; ISSN 2166-2746

Publisher:: American Vacuum Society / AIPCopyright Statement

Country of Publication:: United States

Language:: English

References (32)

Economic competitiveness of III-V on silicon tandem one-sun photovoltaic solar modules in favorable future scenarios: Economic competitiveness of III-V on on silicon tandem modules Bobela, David C.; Gedvilas, Lynn; Woodhouse, Michael Progress in Photovoltaics: Research and Applications, Vol. 25, Issue 1 https://doi.org/10.1002/pip.2808	journal	September 2016
MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays Maranowski, K. D.; Peterson, J. M.; Johnson, S. M. Journal of Electronic Materials, Vol. 30, Issue 6 https://doi.org/10.1007/BF02665844	journal	June 2001
Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy Benyahia, D.; Kubiszyn, Ł.; Michalczewski, K. Journal of Electronic Materials, Vol. 47, Issue 1 https://doi.org/10.1007/s11664-017-5766-4	journal	September 2017
The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction Ayers, J. E. Journal of Crystal Growth, Vol. 135, Issue 1-2 https://doi.org/10.1016/0022-0248(94)90727-7	journal	January 1994
Use of misfit strain to remove dislocations from epitaxial thin films Matthews, J. W.; Blakeslee, A. E.; Mader, S. Thin Solid Films, Vol. 33, Issue 2 https://doi.org/10.1016/0040-6090(76)90085-7	journal	April 1976
Defects in epitaxial multilayers: I. Misfit dislocations Matthews, J. W.; Blakeslee, A. E. Journal of Crystal Growth, Vol. 27, p. 118-125 https://doi.org/10.1016/S0022-0248(74)80055-2	journal	December 1974
Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer Rodriguez, J. B.; Cerutti, L.; Patriarche, G. Journal of Crystal Growth, Vol. 477 https://doi.org/10.1016/j.jcrysgro.2017.04.003	journal	November 2017
Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J. K. Nano Letters, Vol. 17, Issue 12 https://doi.org/10.1021/acs.nanolett.7b03220	journal	November 2017
InGaN/GaN Quantum Dot Light-Emitting Diodes on Silicon with Coalesced GaN Nanowire Buffer Layer Aiello, Anthony; Das, Debabrata; Bhattacharya, Pallab ACS Applied Nano Materials, Vol. 4, Issue 2 https://doi.org/10.1021/acsanm.0c03227	journal	February 2021
An optical-frequency synthesizer using integrated photonics Spencer, Daryl T.; Drake, Tara; Briles, Travis C. Nature, Vol. 557, Issue 7703 https://doi.org/10.1038/s41586-018-0065-7	journal	April 2018
1.54 [micro sign]m GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays Jallipalli, A.; Kutty, M. N.; Balakrishnan, G. Electronics Letters, Vol. 43, Issue 22 https://doi.org/10.1049/el:20072441	journal	January 2007
Antiphase domain free growth of GaAs on Ge in GaAs/Ge/GaAs heterostructures Strite, S.; Biswas, D.; Kumar, N. S. Applied Physics Letters, Vol. 56, Issue 3 https://doi.org/10.1063/1.102818	journal	January 1990
Growth mechanisms of highly mismatched AlSb on a Si substrate Balakrishnan, G.; Huang, S.; Dawson, L. R. Applied Physics Letters, Vol. 86, Issue 3 https://doi.org/10.1063/1.1850611	journal	January 2005
Molecular-beam epitaxy of GaSb/AlSb optical device layers on Si(100) Malik, R. J.; van der Ziel, J. P.; Levine, B. F. Journal of Applied Physics, Vol. 59, Issue 11 https://doi.org/10.1063/1.336734	journal	June 1986
Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1−x/Si and Ge substrates Ting, S. M.; Fitzgerald, E. A. Journal of Applied Physics, Vol. 87, Issue 5 https://doi.org/10.1063/1.372227	journal	March 2000
Calculation of critical layer thickness versus lattice mismatch for Ge _x Si _{1− x} /Si strained‐layer heterostructures People, R.; Bean, J. C. Applied Physics Letters, Vol. 47, Issue 3 https://doi.org/10.1063/1.96206	journal	August 1985
InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate Loghmari, Z.; Rodriguez, J. -B.; Baranov, A. N. APL Photonics, Vol. 5, Issue 4 https://doi.org/10.1063/5.0002376	journal	April 2020
Perspective on the future of silicon photonics and electronics Margalit, Near; Xiang, Chao; Bowers, Steven M. Applied Physics Letters, Vol. 118, Issue 22 https://doi.org/10.1063/5.0050117	journal	May 2021
X-ray diffraction of III-nitrides Moram, M. A.; Vickers, M. E. Reports on Progress in Physics, Vol. 72, Issue 3 https://doi.org/10.1088/0034-4885/72/3/036502	journal	February 2009
Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate Plis, E.; Rodriguez, J. B.; Balakrishnan, G. Semiconductor Science and Technology, Vol. 25, Issue 8 https://doi.org/10.1088/0268-1242/25/8/085010	journal	July 2010
X-ray diffraction analysis of cubic zincblende III-nitrides Frentrup, Martin; Lee, Lok Yi; Sahonta, Suman-Lata Journal of Physics D: Applied Physics, Vol. 50, Issue 43 https://doi.org/10.1088/1361-6463/aa865e	journal	September 2017
Reciprocal space mapping study of CdTe epilayer grown by molecular beam epitaxy on (2 1 1)B GaAs substrate Polat, Mustafa; Arı, Ozan; Öztürk, Orhan Materials Research Express, Vol. 4, Issue 3 https://doi.org/10.1088/2053-1591/aa61b8	journal	March 2017
Optically pumped laser oscillation in the 1.6 - 1.8 µm region from strained layer Al0.4Ga0.6Sb/GaSb/ Al0.4Ga0.6Sb/Double heterostructures grown by molecular beam hetero-epitaxy on Si substrates van der Ziel, J.; Malik, R.; Walker, J. IEEE Journal of Quantum Electronics, Vol. 22, Issue 9 https://doi.org/10.1109/JQE.1986.1073180	journal	September 1986
Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates Tatebayashi, J.; Jallipalli, A.; Kutty, M. N. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 15, Issue 3 https://doi.org/10.1109/JSTQE.2009.2015678	journal	January 2009
MBE growth of In0.53Ga0.47Sb on In0.53Ga0.47As/InP substrates using the interfacial misfit dislocation arrays Ince, Fatih F.; Frost, Mega; Seth, Subhashree Journal of Vacuum Science & Technology A, Vol. 41, Issue 5 https://doi.org/10.1116/6.0002681	journal	July 2023
Improved mid-infrared interband cascade light-emitting devices Kim, Chul Soo; Bewley, William W.; Merritt, Charles D. Optical Engineering, Vol. 57, Issue 01 https://doi.org/10.1117/1.OE.57.1.011002	journal	August 2017
Dislocation Density Reduction in GaSb Films Grown on GaAs Substrates by Molecular Beam Epitaxy Qian, W.; Skowronski, M.; Kaspi, R. Journal of The Electrochemical Society, Vol. 144, Issue 4 https://doi.org/10.1149/1.1837606	journal	April 1997
Low dark current III–V on silicon photodiodes by heteroepitaxy Sun, Keye; Jung, Daehwan; Shang, Chen Optics Express, Vol. 26, Issue 10 https://doi.org/10.1364/OE.26.013605	journal	May 2018
Mid-infrared interband cascade light emitting devices grown on off-axis silicon substrates Canedy, Chadwick L.; Bewley, William W.; Tomasulo, Stephanie Optics Express, Vol. 29, Issue 22 https://doi.org/10.1364/OE.435825	journal	October 2021
Quantum well interband semiconductor lasers highly tolerant to dislocations Cerutti, Laurent; Díaz Thomas, Daniel A.; Rodriguez, Jean-Baptiste Optica, Vol. 8, Issue 11 https://doi.org/10.1364/OPTICA.438272	journal	November 2021
Mid-infrared 2 × 2 electro-optical switching by silicon and germanium three-waveguide and four-waveguide directional couplers using free-carrier injection Soref, Richard Photonics Research, Vol. 2, Issue 5 https://doi.org/10.1364/PRJ.2.000102	journal	August 2014
Multi-Spectral Quantum Cascade Lasers on Silicon With Integrated Multiplexers Stanton, Eric; Spott, Alexander; Peters, Jon Photonics, Vol. 6, Issue 1 https://doi.org/10.3390/photonics6010006	journal	January 2019

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36 MATERIALS SCIENCE
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energy dispersive X-ray spectroscopy
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Development of “GaSb-on-silicon” metamorphic substrates for optoelectronic device growth

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