Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

Journal Article · Mon Jan 02 04:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3674986· OSTI ID:22025387

Ripalda, J M; Rivera, A; Alen, B; Gonzalez, Y; Gonzalez, L; Briones, F ^[1]; Sanchez, A M ^[2]; Taboada, A G ^[3]; Rotter, T J; Balakrishnan, G ^[4]

---

1. IMM-Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, E-28760 Tres Cantos, Madrid (Spain)
2. Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom)
3. Laboratory for Solid State Physics, ETH Zurich, Schafmattstr. 16, CH-8093 Zurich (Switzerland)
4. Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106 (United States)

We have observed the evolution of the accumulated stress during heteroepitaxial growth of highly lattice mismatched AlSb on GaAs by measuring the deformation of the substrate as a function of time. High resolution transmission electron microscopy images show almost all of the plastic relaxation is accommodated by an array of 90 deg. misfit dislocations at the interface. The in-plane lattice parameter of the resulting metamorphic AlSb is slightly smaller (0.3%) than the bulk value and perfectly matches the lattice parameter of bulk GaSb. It is, therefore, possible to grow nearly stress-free GaSb on GaAs using a metamorphic AlSb buffer layer.

• OSTI ID: 22025387
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 100; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
DEFORMATION
DISLOCATIONS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
INTERFACES
LATTICE PARAMETERS
LAYERS
MOLECULAR BEAM EPITAXY
PLASTICITY
RELAXATION
RESIDUAL STRESSES
RESOLUTION
SEMICONDUCTOR MATERIALS
STRAINS
SUBSTRATES
TIME DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY