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Investigation of the roles of gas-phase CF{sub 2} molecules and F atoms during fluorocarbon plasma processing of Si and ZrO{sub 2} substrates

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3467776· OSTI ID:21476370
;  [1]
  1. Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872 (United States)
The molecular-level chemistry involved in the processing of silicon and zirconia substrates by inductively coupled fluorocarbon (FC) plasmas produced from CF{sub 4} and C{sub 2}F{sub 6} precursors has been explored. The roles of gas-phase excited, neutral, and ionic species, especially CF{sub 2} and F, were examined as they contribute to FC film formation and substrate etching. The surface reactivity of CF{sub 2} radicals in C{sub 2}F{sub 6} plasmas has a dependence on substrate material and plasma system, as measured by our imaging of radicals interacting with surfaces (IRIS) technique. Relative concentrations of excited state species are also dependent upon substrate type. Moreover, differences in the nature and concentrations of gas-phase species in CF{sub 4} and C{sub 2}F{sub 6} plasmas contribute to markedly different surface compositions for FC films deposited on substrates as revealed from x-ray photoelectron spectroscopic analysis. These data have led to the development of a scheme that illustrates the mechanisms of film formation and destruction in these FC/substrate systems with respect to CF{sub 2} and F gas-phase species and also Si and ZrO{sub 2} substrates.
OSTI ID:
21476370
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 108; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English