Kinetic processes for CF{sub 4} abatement of Ar/CF{sub 4}/O{sub 2} gas mixtures in ICP reactors
- Univ. of Illinois, Urbana, IL (United States). Dept. of Electrical and Computer Engineering
Fluorocarbon gas, such as CF{sub 4} and C{sub 2}F{sub 6}, are commonly used in the semiconductor industry for plasma etching. The use of these gases is being questioned by the semiconductor industry due to their global warming potential. For example, the global warning potential of CF{sub 4} is 100 times that of CO{sub 2}. In this paper, the authors discuss abatement strategies for fluorocarbon gases as used in low pressure inductively couple plasma etching reactors. The Hybrid Plasma Equipment Model (HPEM), a 2-dimensional simulation, is used to model the plasma zone and a downstream auxiliary plasma or burn box. As a test system, they consider Ar/CF{sub 4} as the process gas with O{sub 2} injected downstream to facilitate oxidation of the undissociated CF{sub 4}, gas phase reaction products (e.g., C{sub 2}F{sub 6}, C{sub 2}F{sub 4}) and etch product (SiF{sub 4}). They will present results of a parametric study of final emitted species for different gas mixtures, injected O{sub 2} fraction and power deposition.
- Sponsoring Organization:
- National Science Foundation, Washington, DC (United States)
- OSTI ID:
- 346848
- Report Number(s):
- CONF-980601-; TRN: IM9920%%65
- Resource Relation:
- Conference: 25. international conference on plasma science, Raleigh, NC (United States), 1-4 Jun 1998; Other Information: PBD: 1998; Related Information: Is Part Of IEEE conference record -- Abstracts. 1998 IEEE international conference on plasma science; PB: 343 p.
- Country of Publication:
- United States
- Language:
- English
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