Kinetic processes for CF{sub 4} abatement of Ar/CF{sub 4}/O{sub 2} gas mixtures in ICP reactors

Conference · Thu Dec 31 04:00:00 EST 1998

OSTI ID:346848

Xu, X; Kushner, M J ^[1]

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1. Univ. of Illinois, Urbana, IL (United States). Dept. of Electrical and Computer Engineering

Fluorocarbon gas, such as CF{sub 4} and C{sub 2}F{sub 6}, are commonly used in the semiconductor industry for plasma etching. The use of these gases is being questioned by the semiconductor industry due to their global warming potential. For example, the global warning potential of CF{sub 4} is 100 times that of CO{sub 2}. In this paper, the authors discuss abatement strategies for fluorocarbon gases as used in low pressure inductively couple plasma etching reactors. The Hybrid Plasma Equipment Model (HPEM), a 2-dimensional simulation, is used to model the plasma zone and a downstream auxiliary plasma or burn box. As a test system, they consider Ar/CF{sub 4} as the process gas with O{sub 2} injected downstream to facilitate oxidation of the undissociated CF{sub 4}, gas phase reaction products (e.g., C{sub 2}F{sub 6}, C{sub 2}F{sub 4}) and etch product (SiF{sub 4}). They will present results of a parametric study of final emitted species for different gas mixtures, injected O{sub 2} fraction and power deposition.

• Sponsoring Organization: National Science Foundation, Washington, DC (United States)
• OSTI ID: 346848
• Report Number(s): CONF-980601--
• Country of Publication: United States
• Language: English

Related Subjects

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
54 ENVIRONMENTAL SCIENCES
AIR POLLUTION ABATEMENT
CARBON FLUORIDES
CHEMICAL REACTORS
INDUSTRIAL PLANTS
PARAMETRIC ANALYSIS
PLASMA SIMULATION