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Ion effects on CF{sub 2} surface interactions during C{sub 3}F{sub 8} and C{sub 4}F{sub 8} plasma processing of Si

Journal Article · · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
DOI:https://doi.org/10.1116/1.1781180· OSTI ID:20636581
;  [1]
  1. Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872 (United States)
Surface interactions of difluorocarbene (CF{sub 2}) molecules were investigated using our LIF based imaging of radicals interacting with surfaces (IRIS) apparatus. LIF data of CF{sub 2} in C{sub 3}F{sub 8} and C{sub 4}F{sub 8} plasma molecular beams reveal that the relative densities of CF{sub 2} increase with increasing rf power and source pressure in both plasma systems. The surface reactivity of CF{sub 2} molecules during C{sub 3}F{sub 8} and C{sub 4}F{sub 8} plasma processing of room temperature Si substrates was also measured over a broad rf power range and at different pressures. A scatter coefficient (S) greater than one was measured for all unperturbed systems, indicating that CF{sub 2} molecules are produced at the substrate surface during film deposition. The same systems were also studied under ion-limited conditions, yielding S{approx}1, clear indication that ions are partially responsible for CF{sub 2} surface production. Plasma ions were identified using plasma-ion mass spectrometry. These data indicate that higher levels of C{sub x}F{sub y}{sup +} (x>1) are produced in the C{sub 4}F{sub 8} plasmas. X-ray photoelectron spectroscopy analyses of treated substrates showed that amorphous fluorocarbon films were deposited during plasma processing of the substrates. A positive correlation was found between S(CF{sub 2}) and film composition of FC materials deposited in both the IRIS apparatus and independent reactors.
OSTI ID:
20636581
Journal Information:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 5 Vol. 22; ISSN 0734-2101; ISSN JVTAD6
Country of Publication:
United States
Language:
English

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