Low-frequency intensity fluctuations in high-power single-mode ridge quantum-well InGaAs/AlGaAs heterostructure semiconductor lasers

Journal Article · Mon Sep 30 00:00:00 EDT 2002 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2002V032N09ABEH002296· OSTI ID:21470237

Bogatov, Alexandr P; Drakin, A E ^[1]; Plisyuk, S A; Stratonnikov, Aleksei A ^[2]; Kobyakova, M Sh; Zubanov, Andrei V; Marmalyuk, Aleksandr A; Padalitsa, A A ^[3]

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1. P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
2. Moscow Institute of Physics and Technology (State University), Dolgoprudnyi, Moscow Region (Russian Federation)
3. M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

It is shown that for an average output power of 60 mW, the spectral density of low-frequency intensity fluctuations in single-mode semiconductor lasers lies in the interval 6 x 10{sup -17} - 10{sup -15} W{sup 2} Hz{sup -1}. This fluctuation level is caused by the presence of subthreshold longitudinal modes and mode hopping, leading to the emergence of a noticeable 1/f component in their spectrum. (lasers)

• OSTI ID: 21470237
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 32, Issue 9; Other Information: DOI: 10.1070/QE2002v032n09ABEH002296; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
FLUCTUATIONS
GALLIUM ARSENIDES
INDIUM ARSENIDES
OSCILLATION MODES
QUANTUM WELLS
SEMICONDUCTOR LASERS
SPECTRAL DENSITY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
FUNCTIONS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
NANOSTRUCTURES
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
SPECTRAL FUNCTIONS
VARIATIONS