Correlation of low-frequency intensity and frequency fluctuations in GaAlAs lasers

Journal Article · Fri Oct 01 00:00:00 EDT 1982 · IEEE Trans. Microwave Theory Tech.; (United States)

DOI:https://doi.org/10.1109/TMTT.1982.1131314· OSTI ID:5920462

Dandridge, A; Taylor, H F

The intensity and frequency noise in single-mode GaAlAs lasers have been measured and the correlation between these instabilities investigated. The measurements were made over the range from 10 Hz to 25 kHz in CSP, TJS, and BH laser structures. It is found that the coherence function for frequency noise and intensity noise from one facet is near unity at the lasing threshold, decreases rapidly with decreasing current below threshold, and also decreases, but more slowly, as the current is increased above threshold. Qualitatively similar behavior is found for the correlation between intensity noise from the two laser facets. Junction voltage fluctuations are not correlated with the other types of noise, except when longitudinal mode hopping is occurring. A model in which both intensity and frequency noise are related to local current variations and optical backscattering in the diode active region is developed to explain the results.

• Research Organization: Naval Research Lab. (NRL), Washington, DC (United States)
• OSTI ID: 5920462
• Journal Information: IEEE Trans. Microwave Theory Tech.; (United States), Vol. MTT-30:10
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FREQUENCY ANALYSIS
NOISE
ALUMINIUM ARSENIDES
BACKSCATTERING
ELECTRIC POTENTIAL
GALLIUM ARSENIDES
JUNCTIONS
MODE CONTROL
MODE SELECTION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONTROL
GALLIUM COMPOUNDS
LASERS
PNICTIDES
SCATTERING
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)