Optical properties of antimony-doped p-type ZnO films fabricated by pulsed laser deposition

Journal Article · Mon Jun 01 04:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3126518· OSTI ID:21352225

Pan, X H ^[1]; Guo, W; Pan, X Q ^[2]; Ye, Z Z; He, H P ^[1]; Liu, B; Che, Y ^[3]

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1. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)
2. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
3. Functional Materials Group, IMRA America, Inc., Ann Arbor, Michigan 48105 (United States)

We investigated optical properties of Sb-doped p-type ZnO films grown on n-Si (100) substrates by oxygen plasma-assisted pulsed laser deposition. Two acceptor states, with the acceptor levels of 161 and 336 meV, are identified by well-resolved photoluminescence spectra. Under oxygen-rich conditions, the deep acceptor in Sb-doped ZnO film is Zn vacancy. The shallow acceptor is Sb{sub Zn}-2V{sub Zn} complex induced by Sb doping. The origin of p-type behavior in Sb-doped ZnO has been ascribed to the formation of Sb{sub Zn}-2V{sub Zn} complex.

• OSTI ID: 21352225
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 105; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DEPOSITION
DOPED MATERIALS
ELECTROMAGNETIC RADIATION
ELEMENTS
EMISSION
ENERGY BEAM DEPOSITION
FILMS
IMPURITIES
IRRADIATION
LASER RADIATION
LUMINESCENCE
MATERIALS
METALS
NONMETALS
OPTICAL PROPERTIES
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PHOTOLUMINESCENCE
PHOTON EMISSION
PHYSICAL PROPERTIES
PLASMA
POINT DEFECTS
PULSED IRRADIATION
RADIATIONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SURFACE COATING
THIN FILMS
VACANCIES
ZINC COMPOUNDS
ZINC OXIDES