Growth and conduction mechanism of As-doped p-type ZnO thin films deposited by MOCVD

Journal Article · Fri Mar 15 04:00:00 EDT 2013 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2012.12.035· OSTI ID:22290401

Ma, Y.; Gao, Q.; Wu, G. G. ^[1]; Gao, F. B.; Yin, J. Z.; Zhang, B. L.; Du, G. T. ^[1]

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1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)

Highlight: ► P-type As-doped ZnO thin films was fabricated by MOCVD after post-growth annealing. ► The formation mechanism of p-ZnO with high hole concentration above 10{sup 19} cm{sup −3} was elucidated. ► Besides As{sub Zn}–2V{sub Zn} complex, C impurities also played an important role in realizing p-ZnO. ► The formations of As{sub O} and O-C-O complex were partially contributed to the p-type ZnO: As films. - Abstract: As-doped p-type ZnO thin films were fabricated by metal organic chemical vapor deposition (MOCVD) after in situ annealing in a vacuum. The p-type conduction mechanism was suggested by the analysis of X-ray photoelectron spectroscopy and ultraviolet photoemission spectroscopy. It was found that most of the As dopants in p-ZnO thin films formed As{sub Zn}–2V{sub Zn} shallow acceptor complex, simultaneously, carbon impurities also played an important role in realizing p-type conductivity in ZnO. Substitutional carbon on oxygen site created passivated defect bands by combining with Ga atoms due to the donor-acceptor pair Coulomb binding, which shifted the valence-band maximum upwards for ZnO and thus increased the hole concentration.

• OSTI ID: 22290401
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 3 Vol. 48; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CARBON
CHEMICAL VAPOR DEPOSITION
CONCENTRATION RATIO
DEPOSITS
DOPED MATERIALS
ORGANOMETALLIC COMPOUNDS
OXYGEN
PHOTOEMISSION
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES