p-Type ZnO Thin Films Grown by MOCVD

Conference · Tue Feb 01 00:00:00 EST 2005

DOI:https://doi.org/10.1109/PVSC.2005.1488092· OSTI ID:15016453

Li, X.; Asher, S. E.; Keyes, B. M.; Moutinho, H. R.; Luther, J.; Coutts, T. J.

ZnO has demonstrated a possibility to be doped as a p-type by using nitrogen and other group-V elements. A high nitrogen doping concentration by metalorganic chemical vapor deposition (MOCVD) with nitric oxide (NO) gas has been achieved. However, the processing window for obtaining the p-type ZnO:N film is very narrow, and the hole concentration is typically low. Possible compensation and passivation effects have been studied. Hydrogen and carbon elements are detected by secondary-ion mass spectroscopy (SIMS). Considering the other experimental and modeling results, we believe that the impurities inadvertently incorporated with the zinc precursor could be compensating or passivating the nitrogen acceptor and result in the low hole concentration.

• Research Organization: National Renewable Energy Lab., Golden, CO (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC36-99GO10337
• OSTI ID: 15016453
• Report Number(s): NREL/CP--520-37378
• Resource Type: Conference paper/presentation
• Conference Information: 31. IEEE Photovoltaics Specialists Conference and Exhibition, Lake Buena Vista, FL (US), 3-7 Jan 2005
• Country of Publication: United States
• Language: English

Related Subjects

08 HYDROGEN
14 SOLAR ENERGY
36 MATERIALS SCIENCE
CARBON
CHEMICAL VAPOR DEPOSITION
HYDROGEN
IMPURITIES
MASS SPECTROSCOPY
METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD)
NITRIC OXIDE
NITRIC OXIDE (NO)
NITROGEN
NITROGEN DOPING
P-TYPE
PASSIVATION
PRECURSOR
PROCESSING
PV
SECONDARY-ION MASS SPECTROSCOPY (SIMS)
SIMULATION
SOLAR ENERGY - PHOTOVOLTAICS
THIN FILMS
ZINC