Residual and nitrogen doping of homoepitaxial nonpolar m-plane ZnO films grown by molecular beam epitaxy

Journal Article · Mon Mar 28 04:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3572025· OSTI ID:21518355

Taienoff, D; Deparis, C; Teisseire, M; Morhain, C ^[1]; Al-Khalfioui, M; Vinter, B; Chauveau, J -M ^[1]

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1. Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Rue B. Gregory, F-06560 Valbonne Sophia Antipolis (France)

We report the homoepitaxial growth by molecular beam epitaxy of high quality nonpolar m-plane ZnO and ZnO:N films over a large temperature range. The nonintentionally doped ZnO layers exhibit a residual doping as low as {approx}10{sup 14} cm{sup -3}. Despite an effective incorporation of nitrogen, p-type doping was not achieved, ZnO:N films becoming insulating. The high purity of the layers and their low residual n-type doping evidence compensation mechanisms in ZnO:N films.

• OSTI ID: 21518355
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 98; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHALCOGENIDES
CRYSTAL GROWTH METHODS
DOPED MATERIALS
ELEMENTS
EPITAXY
FILMS
MATERIALS
MOLECULAR BEAM EPITAXY
NITROGEN
NONMETALS
OXIDES
OXYGEN COMPOUNDS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE
ZINC COMPOUNDS
ZINC OXIDES