Optical investigations of Be doped ZnO films grown by molecular beam epitaxy

Journal Article · Wed Jun 15 04:00:00 EDT 2016 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2016.02.012· OSTI ID:22581550

Chen, Mingming ^[1]; Zhu, Yuan ^[2]; Chen, Anqi; Shen, Zhen ^[2]; Tang, Zikang ^[2]

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1. Faculty of Science, Jiangsu University, Zhenjiang, Jiangsu 212013 (China)
2. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)

Highlights: • The optical properties of Be doped ZnO films were investigated. • Low temperature photoluminescence spectrum was dominated by D°X and DAP emissions. • Shallow acceptor state with ionization energy of 116 meV was found in ZnO:Be films. • It is suggested that the incorporated Be atom might favor formation of Zn vacancies defects. • This work demonstrates that N doping BeZnO might be suitable for fabricating reliable p-type ZnO materials. - Abstract: In this article, the optical properties of ZnO:Be films grown by plasma-assisted molecular beam epitaxy were investigated by the excitation density-dependent and temperature-dependent photoluminescence measurements. The low temperature photoluminescence spectra showed a dominant excitons bound to neutral donors (D°X) emission centered at 3.3540 eV and strong donor-acceptor pair (DAP) transitions at 3.3000 eV. In addition, it showed that the intensity ratio of the DAP and D°X peaks changed with background electron concentration. Furthermore, a shallow acceptor state with ionization energy of 116 meV was found and attributed to Zn vacancy. The present study further suggests that Be and N codoping ZnO might be suitable for fabricating reliable p-type ZnO materials.

• OSTI ID: 22581550
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Vol. 78; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONCENTRATION RATIO
DOPED MATERIALS
ELECTRONS
EMISSION SPECTRA
EXCITATION
EXCITONS
IONIZATION
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
P-TYPE CONDUCTORS
PHOTOLUMINESCENCE
TEMPERATURE DEPENDENCE
THIN FILMS
VACANCIES
ZINC OXIDES