Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

Journal Article · Sun May 15 04:00:00 EDT 2011 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3525639· OSTI ID:22054032

Fan, J C; Zhu, C Y; Yang, B; Fung, S; Beling, C D; Brauer, G; Anwand, W; Grambole, D; Skorupa, W; Wong, K S; Zhong, Y C; Xie, Z; Ling, C C ^[1]

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1. Department of Physics, University of Hong Kong, Pokfulam (Hong Kong)

Arsenic doped ZnO and ZnMgO films were deposited on SiO{sub 2} using radio frequency magnetron sputtering and ZnO-Zn{sub 3}As{sub 2} and ZnO-Zn{sub 3}As{sub 2}-MgO targets, respectively. It was found that thermal activation is required to activate the formation of p-type conductivity. Hall measurements showed that p-type films with a hole concentration of {approx}10{sup 17} cm{sup -3} and mobility of {approx}8 cm{sup 2} V{sup -1} s{sup -1} were obtained at substrate temperatures of 400-500 deg. C The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As{sub Zn}-2V{sub Zn} shallow acceptor complex and removes the compensating hydrogen center.

• OSTI ID: 22054032
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 3 Vol. 29; ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ANNIHILATION
ARSENIC
DOPED MATERIALS
HALL EFFECT
HOLE MOBILITY
MAGNESIUM OXIDES
MAGNETRONS
NUCLEAR REACTION ANALYSIS
P-TYPE CONDUCTORS
PHOTOLUMINESCENCE
POSITRONS
RADIOWAVE RADIATION
SILICON OXIDES
SPUTTERING
SUBSTRATES
SURFACE COATING
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES