Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

Journal Article · Thu Oct 01 04:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3236578· OSTI ID:21361867

Fan, J C; Zhu, C Y; Fung, S; To, C K; Yang, B; Beling, C D; Ling, C C ^[1]; Zhong, Y C; Wong, K S ^[2]; Xie, Z ^[3]; Brauer, G; Skorupa, W ^[4]; Anwand, W ^[4]

---

1. Department of Physics, University of Hong Kong, Pokfulam Road (Hong Kong)
2. Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay (Hong Kong)
3. College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China)
4. Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, Postfach 510119, D-01314 Dresden (Germany)

As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above approx400 deg. C, the films changed from n type to p type. Hole concentration and mobility of approx6x10{sup 17} cm{sup -3} and approx6 cm{sup 2} V{sup -1} s{sup -1} were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the As{sub Zn}-2V{sub Zn} shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation.

• OSTI ID: 21361867
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 106; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMINO ACIDS
ANNIHILATION
ANTILEPTONS
ANTIMATTER
ANTIPARTICLES
ARSENIC
CARBOXYLIC ACIDS
CHALCOGENIDES
CHEMICAL ANALYSIS
CRYSTAL GROWTH
DEPOSITION
DOPED MATERIALS
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ELEMENTARY PARTICLES
ELEMENTS
EMISSION
FERMIONS
FILMS
HOLE MOBILITY
HOLES
INTERACTIONS
ION MICROPROBE ANALYSIS
LEPTONS
LUMINESCENCE
MASS SPECTRA
MASS SPECTROSCOPY
MATERIALS
MATTER
MICROANALYSIS
MOBILITY
NONDESTRUCTIVE ANALYSIS
ORGANIC ACIDS
ORGANIC COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PARTICLE INTERACTIONS
PHOTOELECTRON SPECTROSCOPY
PHOTOLUMINESCENCE
PHOTON EMISSION
POSITRONS
RADIATIONS
RADIOWAVE RADIATION
SEMICONDUCTOR MATERIALS
SEMIMETALS
SPECTRA
SPECTROSCOPY
SPUTTERING
SUBSTRATES
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC COMPOUNDS
ZINC OXIDES