Characterization of Al-As codoped p-type ZnO films by magnetron cosputtering deposition
Journal Article
·
· Journal of Applied Physics
- Department of Semiconductor and Display Engineering and Department of System and Control Engineering, Hoseo University, Asan, Chungnam 336-795 (Korea, Republic of)
- Electronic Engineering Division, Sun Moon University, Asan, Chungnam 336-708 (Korea, Republic of)
- Department of Digital Media Engineering, Anyang University, Anyang-si, Kyunggi-do 430-714 (Korea, Republic of)
We report the preparation of Al-As codoped p-type ZnO films by rf magnetron cosputtering deposition. The p-type conductivity of the films was revealed by Hall measurements, x-ray photoelectron spectroscopy (XPS), and photoluminescence measurements after being annealed in O{sub 2}. It was observed by XPS that Al content increased with increasing AlAs target power from 80 to 160 W and reached a maximum value at an AlAs target power of 160 W. Hole concentration decreased with increasing Al content. With increasing AlAs target power greater than 160 W, the samples exhibit increases in As and O contents and decreases in Al and Zn contents, which contribute to the increase in hole concentration. A high hole concentration of 2.354x10{sup 20} cm{sup -3}, a low resistivity of 2.122x10{sup -2} {omega} cm, and a Hall mobility of 0.13 cm{sup 2}/V s for the films with high As content of 16.59% were obtained. XPS has also been used to address the unresolved issues related to the p-type formation mechanism of As-doped ZnO, supporting that the acceptor is As{sub Zn}-2V{sub Zn}.
- OSTI ID:
- 21137281
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 103; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Aluminum-nitride codoped zinc oxide films prepared using a radio-frequency magnetron cosputtering system
Realization of low resistive p-ZnO thin film by Al-As codoping
Room-temperature ferromagnetism in (Mn, N)-codoped ZnO thin films prepared by reactive magnetron cosputtering
Journal Article
·
Wed Aug 01 00:00:00 EDT 2007
· Journal of Applied Physics
·
OSTI ID:21057473
Realization of low resistive p-ZnO thin film by Al-As codoping
Journal Article
·
Tue Jun 05 00:00:00 EDT 2012
· AIP Conference Proceedings
·
OSTI ID:22004150
Room-temperature ferromagnetism in (Mn, N)-codoped ZnO thin films prepared by reactive magnetron cosputtering
Journal Article
·
Mon Jun 12 00:00:00 EDT 2006
· Applied Physics Letters
·
OSTI ID:20779405