Characterization of Al-As codoped p-type ZnO films by magnetron cosputtering deposition
- Department of Semiconductor and Display Engineering and Department of System and Control Engineering, Hoseo University, Asan, Chungnam 336-795 (Korea, Republic of)
- Electronic Engineering Division, Sun Moon University, Asan, Chungnam 336-708 (Korea, Republic of)
- Department of Digital Media Engineering, Anyang University, Anyang-si, Kyunggi-do 430-714 (Korea, Republic of)
We report the preparation of Al-As codoped p-type ZnO films by rf magnetron cosputtering deposition. The p-type conductivity of the films was revealed by Hall measurements, x-ray photoelectron spectroscopy (XPS), and photoluminescence measurements after being annealed in O{sub 2}. It was observed by XPS that Al content increased with increasing AlAs target power from 80 to 160 W and reached a maximum value at an AlAs target power of 160 W. Hole concentration decreased with increasing Al content. With increasing AlAs target power greater than 160 W, the samples exhibit increases in As and O contents and decreases in Al and Zn contents, which contribute to the increase in hole concentration. A high hole concentration of 2.354x10{sup 20} cm{sup -3}, a low resistivity of 2.122x10{sup -2} {omega} cm, and a Hall mobility of 0.13 cm{sup 2}/V s for the films with high As content of 16.59% were obtained. XPS has also been used to address the unresolved issues related to the p-type formation mechanism of As-doped ZnO, supporting that the acceptor is As{sub Zn}-2V{sub Zn}.
- OSTI ID:
- 21137281
- Journal Information:
- Journal of Applied Physics, Vol. 103, Issue 7; Other Information: DOI: 10.1063/1.2901050; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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