Room-temperature ferromagnetism in (Mn, N)-codoped ZnO thin films prepared by reactive magnetron cosputtering

Journal Article · Mon Jun 12 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2213929· OSTI ID:20779405

Xu, H Y; Liu, Y C; Xu, C S; Liu, Y X; Shao, C L; Mu, R ^[1]

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1. Center for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun 130024 (China) and Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033 (China)

(Mn, N)-codoped ZnO films were grown on fused silica substrates by reactive magnetron cosputtering. X-ray diffraction measurements reveal that the films have the single-phase wurtzite structure with c-axis preferred orientation. X-ray photoelectron spectroscopy studies indicate the incorporation of both divalent Mn{sup 2+} and trivalent N{sup 3-} ions into ZnO lattice. Acceptor doping with nitrogen partly compensates the ''native donors,'' which results in a low electron concentration of 3.16x10{sup 16} cm{sup -3} though p-type conductivity is not achieved. (Mn, N)-codoped ZnO films show significant ferromagnetism with Curie temperature above 300 K. The mechanism of ferromagnetic coupling in codoped ZnO is discussed based on a bound magnetic polaron model.

• OSTI ID: 20779405
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 88; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CURIE POINT
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRONS
FERROMAGNETIC MATERIALS
FERROMAGNETISM
GRAIN ORIENTATION
MANGANESE
MANGANESE IONS
NITROGEN
NITROGEN IONS
POLARONS
SEMICONDUCTOR MATERIALS
SILICA
TEMPERATURE RANGE 0273-0400 K
TEXTURE
THIN FILMS
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES