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Title: Room-temperature ferromagnetism in (Mn, N)-codoped ZnO thin films prepared by reactive magnetron cosputtering

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.2213929· OSTI ID:20779405
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  1. Center for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun 130024 (China) and Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033 (China)

(Mn, N)-codoped ZnO films were grown on fused silica substrates by reactive magnetron cosputtering. X-ray diffraction measurements reveal that the films have the single-phase wurtzite structure with c-axis preferred orientation. X-ray photoelectron spectroscopy studies indicate the incorporation of both divalent Mn{sup 2+} and trivalent N{sup 3-} ions into ZnO lattice. Acceptor doping with nitrogen partly compensates the ''native donors,'' which results in a low electron concentration of 3.16x10{sup 16} cm{sup -3} though p-type conductivity is not achieved. (Mn, N)-codoped ZnO films show significant ferromagnetism with Curie temperature above 300 K. The mechanism of ferromagnetic coupling in codoped ZnO is discussed based on a bound magnetic polaron model.

OSTI ID:
20779405
Journal Information:
Applied Physics Letters, Vol. 88, Issue 24; Other Information: DOI: 10.1063/1.2213929; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English