Magnetic and transport properties of (Mn, Co)-codoped ZnO films prepared by radio-frequency magnetron cosputtering

Journal Article · Thu Sep 01 00:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2039279· OSTI ID:20714088

Zhengbin, Gu; Changsheng, Yuan; Minghui, Lu; Jing, Wang; Di, Wu; Shantao, Zhang; Shining, Zhu; Yongyuan, Zhu; Yanfeng, Chen ^[1]

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1. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China)

(Mn, Co)-codoped ZnO films have been synthesized on c-sapphire (0001) by a radio-frequency magnetron sputtering system in which two targets were sputtered together. X-ray-diffraction measurements indicate that the films are highly c-axis oriented. X-ray photon spectra show that the doped Mn and Co ions in (Mn, Co) ZnO films are both in the divalent states. The films show ferromagnetic behavior with a coercivity of about 90 Oe and a saturation moment of 0.11{mu}{sub B}/(0.3Mn{sup 2+}+0.7Co{sup 2+}) at 300 K. In the lower temperatures between 5 and 20 K, a relatively large positive magnetoresistance over 10% was observed for (Mn{sub 0.03}, Co{sub 0.07})Zn{sub 0.90}O film. The number of carrier concentration is experimentally established to be 1.5613x10{sup 18} cm{sup -3} and the mobility to be 2.815 cm{sup 2} V{sup -1} s{sup -1} for (Mn{sub 0.03}, Co{sub 0.07})Zn{sub 0.90}O film by Hall measurements at 300 K. The origins of the room-temperature magnetism and the large positive magnetoresistance are also discussed.

• OSTI ID: 20714088
• Journal Information: Journal of Applied Physics, Vol. 98, Issue 5; Other Information: DOI: 10.1063/1.2039279; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER DENSITY
CARRIER MOBILITY
COBALT IONS
COERCIVE FORCE
DEPOSITION
DOPED MATERIALS
FERROMAGNETIC MATERIALS
MAGNETIC MOMENTS
MAGNETISM
MAGNETORESISTANCE
MANGANESE IONS
RADIOWAVE RADIATION
SAPPHIRE
SPUTTERING
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0273-0400 K
X-RAY DIFFRACTION
ZINC OXIDES