Realization of low resistive p-ZnO thin film by Al-As codoping

Journal Article · Tue Jun 05 04:00:00 EDT 2012 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4710227· OSTI ID:22004150

Balakrishnan, L; Gowrishankar, S; Gopalakrishnan, N ^[1]

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1. Thin Film Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli 620015 (India)

Al-As codoping into ZnO has been proposed to realize low resistive and stable p-ZnO thin film by RF magnetron sputtering. Al-As codoping has been achieved by As back diffusion from GaAs substrate and sputtering Al doped ZnO target. Hall measurements showed that the hole concentration increases with the increase of Al concentration from 10{sup 15} to 10{sup 20} cm{sup -3}. Among the grown films, 1 at% Al doped ZnO: As showed low resistivity (3.5x10{sup -2}{Omega}cm) with high hole concentration. X-ray diffraction shows that all the films are crystallized in wurtzite structure with (002) preferential orientation. The diffusion of As atoms from the substrate and the presence of dopants in the film have been confirmed by Rutherford ford back scattering and energy dispersive spectroscopy analysis, respectively.

• OSTI ID: 22004150
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1447; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ARSENIC
CRYSTAL GROWTH
CUBIC LATTICES
DEPOSITION
DIFFUSION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
GALLIUM ARSENIDES
HALL EFFECT
HOLES
ORIENTATION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION
ZINC OXIDES